Advancements in the Utilization of Monolayer Transition Metal Dichalcogenides for Quantum Logic Gates

Abstract

In the swiftly evolving realm of quantum computing, the pursuit of materials capable of hosting quantum information with high fidelity is crucial. Monolayer transition metal dichalcogenides (TMDs) have garnered attention due to their auspicious properties for quantum logic gate applications. This study systematically explores the utility of TMDs, such as MoS₂, WS₂, MoSe₂, and WSe₂, for their potential in quantum computing architectures. Leveraging advanced computational methods, including density functional theory (DFT) and the GW approximation, we evaluated the electronic properties of these monolayer TMDs, which revealed substantial band gaps, significant spin-orbit coupling, and promising carrier mobility—all pivotal for the operation of quantum logic gates. Experimental synthesis through chemical vapor deposition (CVD) was optimized to produce monolayers with uniform thickness and minimal defects. Post-synthesis characterization, utilizing high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) spectroscopy, confirmed the monolayers' crystalline quality and band structure, aligning closely with theoretical predictions. This research underlines the potential of TMDs in maintaining coherence and stability under varying environmental conditions, thus enhancing their applicability in quantum logic gates. The findings provide compelling evidence of TMDs as viable candidates for the development of scalable, efficient quantum computing platforms and set a precedent for future exploration of 2D materials in quantum technologies.